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Hai Zhou Lu (The University of Hong Kong)

Talk Title: Competing  weak anti-localization and weak localization in topological insulators

A magnetoconductivity formula is presented for the surface states of a
magnetically doped topological insulator [1]. It reveals a competing
effect of weak localization (WL) and weak anti-localization (WAL) in
quantum diffusion transport when an energy gap is opened at the Dirac
point by the magnetic doping. It is found that, while random magnetic
scattering always drives the system from the symplectic to the unitary
class, the gap could induce crossover from the weak anti-localization
to the weak localization, tunable by the Fermi energy or the gap. We
not only described the crossover from WAL to unitary [2], but also
predicted the recent experimental progress that observed the crossover
from WAL to WL [3]. The possible role played by the bulk states in the
observed weak antilocalization in recent experiments will also be
discussed.

References:

[1] "Competing weak localization and anti-localization in topological
surface states", Hai-Zhou Lu, Junren Shi, and Shun-Qing Shen,
arXiv:1101.5437 (2011).
[2] "Impurity effect on weak anti-localization in the topological
insulator Bi2Te3", Hong-Tao He, Gan Wang, Tao Zhang, Iam-Keong Sou,
George K. L. Wong, Jian-Nong Wang, Hai-Zhou Lu, Shun-Qing Shen,
Fu-Chun Zhang, Phys. Rev. Lett. 106, 166805 (2011).
[3] "Crossover between weak localization and weak antilocalization in
magnetically doped topological insulator",  Minhao Liu, Jinsong Zhang,
Cui-Zu Chang, Zuocheng Zhang, Xiao Feng, Kang Li, Ke He, Li-li Wang,
Xi Chen, Xi Dai, Zhong Fang, Qi-Kun Xue, Xucun Ma, Yayu Wang,
arXiv:1103.3353 (2011).

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